N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220FP STMicroelectronics STF12N60M2
- RS Stock No.:
- 906-2779
- Mfr. Part No.:
- STF12N60M2
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)**
MYR31.83
1845 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
---|---|---|
5 - 10 | MYR6.366 | MYR31.83 |
15 - 20 | MYR6.23 | MYR31.15 |
25 + | MYR6.042 | MYR30.21 |
**price indicative
- RS Stock No.:
- 906-2779
- Mfr. Part No.:
- STF12N60M2
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 9 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | TO-220FP | |
Series | MDmesh M2 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 450 mΩ | |
Channel Mode | Enhancement | |
Maximum Power Dissipation | 25 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 16 nC @ 10 V | |
Length | 10.4mm | |
Width | 4.6mm | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Height | 16.4mm | |
Forward Diode Voltage | 1.6V | |
Select all | ||
---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220FP | ||
Series MDmesh M2 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 450 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 16 nC @ 10 V | ||
Length 10.4mm | ||
Width 4.6mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 16.4mm | ||
Forward Diode Voltage 1.6V | ||
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