Vishay EF Series N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK SiHB28N60EF-GE3

RS Stock No.:: 903-4504
Mfr. Part No.:: SiHB28N60EF-GE3
Manufacturer:: Vishay

Vishay EF Series N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK SiHB28N60EF-GE3

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Subtotal (1 pack of 2 units)**

MYR49.12

642 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

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Units	Per Unit	Per Pack**
2 - 248	MYR24.56	MYR49.12
250 - 498	MYR23.33	MYR46.66
500 +	MYR22.165	MYR44.33

**price indicative

RS Stock No.:: 903-4504
Mfr. Part No.:: SiHB28N60EF-GE3
Manufacturer:: Vishay

SiHB28N60EF, EF Series Power MOSFET with Fast Body Diode
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	28 A
Maximum Drain Source Voltage	600 V
Series	EF Series
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	123 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	9.65mm
Length	10.67mm
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	80 nC @ 10 V
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	4.83mm

Vishay EF Series N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK SiHB28N60EF-GE3

FREE delivery for orders over MYR500.00

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

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