Vishay EF Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 177-7628
- Mfr. Part No.:
- SIHB28N60EF-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 177-7628
- Mfr. Part No.:
- SIHB28N60EF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 123mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 123mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)