Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263 IPB083N10N3GATMA1
- RS Stock No.:
- 897-7361
- Mfr. Part No.:
- IPB083N10N3GATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 8 units)*
MYR75.704
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- Plus 280 unit(s) shipping from 05 January 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 8 - 248 | MYR9.463 | MYR75.70 |
| 256 - 496 | MYR8.989 | MYR71.91 |
| 504 + | MYR8.541 | MYR68.33 |
*price indicative
- RS Stock No.:
- 897-7361
- Mfr. Part No.:
- IPB083N10N3GATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.31mm | |
| Width | 9.45 mm | |
| Standards/Approvals | No | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 175°C | ||
Length 10.31mm | ||
Width 9.45 mm | ||
Standards/Approvals No | ||
Height 4.57mm | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET & Diode 100 V Enhancement, 3-Pin TO-263 IPB065N10N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-262
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD082N10N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-262 IPI086N10N3GXKSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IPP072N10N3GXKSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-263
