Toshiba TK Type N-Channel MOSFET, 60 A, 120 V Enhancement, 3-Pin TO-220 TK32A12N1,S4X(S
- RS Stock No.:
- 896-2344
- Mfr. Part No.:
- TK32A12N1,S4X(S
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
MYR17.69
FREE delivery for orders over RM 500.00
In Stock
- 20 unit(s) ready to ship from another location
- Plus 60 unit(s) shipping from 06 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | MYR3.538 | MYR17.69 |
| 25 - 120 | MYR2.908 | MYR14.54 |
| 125 - 245 | MYR2.446 | MYR12.23 |
| 250 - 495 | MYR2.322 | MYR11.61 |
| 500 + | MYR2.266 | MYR11.33 |
*price indicative
- RS Stock No.:
- 896-2344
- Mfr. Part No.:
- TK32A12N1,S4X(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | TK | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 30W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.5 mm | |
| Length | 10mm | |
| Height | 15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series TK | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 30W | ||
Maximum Operating Temperature 150°C | ||
Width 4.5 mm | ||
Length 10mm | ||
Height 15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET N-Channel, TK3x Series, Toshiba
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Related links
- Toshiba TK Type N-Channel MOSFET 60 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS1X(S
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220