N-Channel MOSFET, 21 A, 60 V, 3-Pin TO-220F onsemi FDPF320N06L
- RS Stock No.:
- 864-8600
- Mfr. Part No.:
- FDPF320N06L
- Manufacturer:
- onsemi
Subtotal (1 pack of 10 units)**
MYR46.61
980 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
|---|---|---|
| 10 + | MYR4.661 | MYR46.61 |
**price indicative
- RS Stock No.:
- 864-8600
- Mfr. Part No.:
- FDPF320N06L
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220F | |
| Series | PowerTrench | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 38 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 26 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.36mm | |
| Width | 4.9mm | |
| Typical Gate Charge @ Vgs | 23.2 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.07mm | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220F | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 38 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 26 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 10.36mm | ||
Width 4.9mm | ||
Typical Gate Charge @ Vgs 23.2 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 16.07mm | ||
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