STMicroelectronics STripFET Type N-Channel MOSFET, 40 A, 200 V Enhancement, 3-Pin TO-263 STB40NF20
- RS Stock No.:
- 829-0037
- Mfr. Part No.:
- STB40NF20
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
MYR35.50
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 18 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 22 | MYR17.75 | MYR35.50 |
| 24 - 98 | MYR17.40 | MYR34.80 |
| 100 - 248 | MYR17.055 | MYR34.11 |
| 250 - 498 | MYR16.715 | MYR33.43 |
| 500 + | MYR16.38 | MYR32.76 |
*price indicative
- RS Stock No.:
- 829-0037
- Mfr. Part No.:
- STB40NF20
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | STripFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 160W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 75nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.35 mm | |
| Height | 4.6mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series STripFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 160W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 75nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 9.35 mm | ||
Height 4.6mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Automotive Standard No | ||
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics STripFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- STMicroelectronics STripFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- STMicroelectronics STripFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 STB30NF20
- STMicroelectronics STripFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 STB75NF20
- STMicroelectronics STripFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- STMicroelectronics STripFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-252
- STMicroelectronics STripFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- STMicroelectronics STripFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220