P-Channel MOSFET, 20 A, 30 V, 8-Pin SOIC Infineon IRF9310TRPBF
- RS Stock No.:
- 827-3912
- Mfr. Part No.:
- IRF9310TRPBF
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)**
MYR56.72
Stock check temporarily unavailable - call for stock availability
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
---|---|---|
10 - 990 | MYR5.672 | MYR56.72 |
1000 - 1990 | MYR4.778 | MYR47.78 |
2000 + | MYR4.514 | MYR45.14 |
**price indicative
- RS Stock No.:
- 827-3912
- Mfr. Part No.:
- IRF9310TRPBF
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 20 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOIC | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 6.8 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.4V | |
Minimum Gate Threshold Voltage | 1.3V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Length | 5mm | |
Typical Gate Charge @ Vgs | 110 nC @ 15 V, 58 nC @ 4.5 V | |
Width | 4mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 1.5mm | |
Select all | ||
---|---|---|
Manufacturer Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 6.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 110 nC @ 15 V, 58 nC @ 4.5 V | ||
Width 4mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
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