Infineon HEXFET Type P-Channel MOSFET, -3.6 A, -30 V Enhancement, 8-Pin SOIC IRF7606TRPBF
- RS Stock No.:
- 262-6742
- Mfr. Part No.:
- IRF7606TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
MYR65.30
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 13 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | MYR2.612 | MYR65.30 |
| 50 - 75 | MYR2.56 | MYR64.00 |
| 100 - 475 | MYR2.352 | MYR58.80 |
| 500 - 1975 | MYR2.136 | MYR53.40 |
| 2000 + | MYR2.095 | MYR52.38 |
*price indicative
- RS Stock No.:
- 262-6742
- Mfr. Part No.:
- IRF7606TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -3.6A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -3.6A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.
Fully characterized avalanche voltage and current
Related links
- Infineon HEXFET Type P-Channel MOSFET -30 V Enhancement, 8-Pin SOIC
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- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC