DiodesZetex DMP31D0U Type P-Channel MOSFET, 480 mA, 30 V Enhancement, 3-Pin SOT-23 DMP31D0U-7
- RS Stock No.:
- 827-0507
- Mfr. Part No.:
- DMP31D0U-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
MYR50.35
FREE delivery for orders over RM 500.00
In Stock
- 4,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 200 | MYR1.007 | MYR50.35 |
| 250 - 450 | MYR0.906 | MYR45.30 |
| 500 - 1200 | MYR0.781 | MYR39.05 |
| 1250 - 2450 | MYR0.713 | MYR35.65 |
| 2500 + | MYR0.678 | MYR33.90 |
*price indicative
- RS Stock No.:
- 827-0507
- Mfr. Part No.:
- DMP31D0U-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 480mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | DMP31D0U | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 710mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Length | 3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 480mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series DMP31D0U | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 710mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Length 3mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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