Infineon OptiMOS P Type P-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TSDSON BSZ086P03NS3GATMA1
- RS Stock No.:
- 825-9130
- Mfr. Part No.:
- BSZ086P03NS3GATMA1
- Manufacturer:
- Infineon
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MYR63.20
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 1240 | MYR3.16 | MYR63.20 |
| 1260 - 2480 | MYR2.927 | MYR58.54 |
| 2500 + | MYR2.48 | MYR49.60 |
*price indicative
- RS Stock No.:
- 825-9130
- Mfr. Part No.:
- BSZ086P03NS3GATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSDSON | |
| Series | OptiMOS P | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 69W | |
| Typical Gate Charge Qg @ Vgs | 43.2nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSDSON | ||
Series OptiMOS P | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 69W | ||
Typical Gate Charge Qg @ Vgs 43.2nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
Infineon OptiMOS P Series MOSFET, 30V Drain Source Voltage, 40A Continuous Drain Current - BSZ086P03NS3GATMA1
This MOSFET is a P‑channel enhancement device designed for surface‑mount power switching in industrial temperature environments. It operates across an extended ambient range and is intended for high‑current switching roles where compact, low‑profile packaging is required.
Features and Benefits:
• 30V drain-source rating supports low‑voltage power rails
• 40A continuous drain current enables high‑current switching
• 13.4 mΩ low Rds(on) reduces conduction losses
• 69W maximum power dissipation manages thermal load
• 43.2 nC typical gate charge balances switching speed and drive demand
• 25V maximum gate-source voltage permits robust gate‑drive margins
• 40A continuous drain current enables high‑current switching
• 13.4 mΩ low Rds(on) reduces conduction losses
• 69W maximum power dissipation manages thermal load
• 43.2 nC typical gate charge balances switching speed and drive demand
• 25V maximum gate-source voltage permits robust gate‑drive margins
Applications
• Suitable for synchronous buck converters in power supplies
• Ideal for DC motor control and drive stages
• Used for load switching in telecoms and server power systems
• Can be used for battery management and distribution circuits
• Suitable for compact power modules requiring low‑profile components
• Ideal for DC motor control and drive stages
• Used for load switching in telecoms and server power systems
• Can be used for battery management and distribution circuits
• Suitable for compact power modules requiring low‑profile components
What package type should I expect for PCB assembly?
It is supplied in an 8‑pin TSDSON surface‑mount package suitable for automated pick‑and‑place and reflow soldering processes.
How does the device handle wide temperature ranges during operation?
The component is specified to operate from -55°C up to 150°C, allowing use in harsh industrial temperature conditions with appropriate thermal management.
What channel conduction polarity must the gate driver accommodate?
The device is P‑channel, so gate‑drive logic must be arranged for P‑type enhancement operation and appropriate pull‑up/pull‑down signalling.
Are there mounting or profile advantages to consider?
The low‑profile 1.1mm package height supports space‑constrained layouts and enables dense assembly in compact power designs.
Related links
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