Nexperia NX3008NBK Type N-Channel MOSFET, 400 mA, 30 V Enhancement, 3-Pin SOT-23 NX3008NBK,215
- RS Stock No.:
- 816-0576
- Mfr. Part No.:
- NX3008NBK,215
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 150 units)*
MYR49.05
FREE delivery for orders over RM 500.00
In Stock
- 300 unit(s) ready to ship from another location
- Plus 6,900 unit(s) shipping from 26 February 2026
- Plus 3,000 unit(s) shipping from 12 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 150 - 600 | MYR0.327 | MYR49.05 |
| 750 - 1350 | MYR0.278 | MYR41.70 |
| 1500 + | MYR0.244 | MYR36.60 |
*price indicative
- RS Stock No.:
- 816-0576
- Mfr. Part No.:
- NX3008NBK,215
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NX3008NBK | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.8Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.14W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 0.52nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NX3008NBK | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.8Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.14W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 0.52nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 3mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
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