N-Channel MOSFET, 11.5 A, 60 V, 3-Pin DPAK onsemi FDD5353
- RS Stock No.:
- 809-0896
- Mfr. Part No.:
- FDD5353
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)**
MYR38.18
Temporarily out of stock - back order for despatch 10/07/2025, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
|---|---|---|
| 5 - 620 | MYR7.636 | MYR38.18 |
| 625 - 1245 | MYR7.254 | MYR36.27 |
| 1250 + | MYR6.89 | MYR34.45 |
**price indicative
- RS Stock No.:
- 809-0896
- Mfr. Part No.:
- FDD5353
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11.5 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | PowerTrench | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 20 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 69 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 6.22mm | |
| Typical Gate Charge @ Vgs | 46 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.73mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 11.5 A | ||
Maximum Drain Source Voltage 60 V | ||
Series PowerTrench | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 69 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6.22mm | ||
Typical Gate Charge @ Vgs 46 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 6.73mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
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