onsemi Isolated PowerTrench 2 Type N-Channel Dual N-Channel Power Trench MOSFET, 12 A, 40 V Enhancement, 8-Pin Power 33

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Subtotal (1 pack of 5 units)*

MYR35.07

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Last RS stock
  • 370 left, ready to ship from another location
  • Final 2,150 unit(s) shipping from 09 January 2026
Units
Per Unit
Per Pack*
5 - 745MYR7.014MYR35.07
750 - 1495MYR6.866MYR34.33
1500 +MYR6.66MYR33.30

*price indicative

Packaging Options:
RS Stock No.:
806-3504
Mfr. Part No.:
FDMC8030
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

Dual N-Channel Power Trench MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

40V

Series

PowerTrench

Package Type

Power 33

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

1.9W

Maximum Gate Source Voltage Vgs

±12 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

30nC

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Length

3mm

Width

3 mm

Height

0.75mm

Standards/Approvals

Lead-Free and RoHS

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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