N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-247 IXYS IXFH60N50P3
- RS Stock No.:
- 802-4382
- Mfr. Part No.:
- IXFH60N50P3
- Manufacturer:
- IXYS
6 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each
MYR50.53
| Units | Per Unit |
| 1 - 7 | MYR50.53 |
| 8 - 14 | MYR50.50 |
| 15 + | MYR46.12 |
- RS Stock No.:
- 802-4382
- Mfr. Part No.:
- IXFH60N50P3
- Manufacturer:
- IXYS
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | TO-247 |
| Series | HiperFET, Polar3 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 100 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 1.04 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 5.3mm |
| Length | 16.26mm |
| Typical Gate Charge @ Vgs | 96 nC @ 10 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Height | 21.46mm |
| Minimum Operating Temperature | -55 °C |