Nexperia BSS84AK Type P-Channel MOSFET, 180 mA, 50 V Enhancement, 3-Pin SOT-23 BSS84AK,215
- RS Stock No.:
- 792-0908
- Mfr. Part No.:
- BSS84AK,215
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 100 units)*
MYR25.30
FREE delivery for orders over RM 500.00
In Stock
- 300 unit(s) ready to ship from another location
- Plus 7,900 unit(s) shipping from 13 May 2026
- Plus 3,000 unit(s) shipping from 27 May 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 100 - 700 | MYR0.253 | MYR25.30 |
| 800 - 1400 | MYR0.248 | MYR24.80 |
| 1500 + | MYR0.241 | MYR24.10 |
*price indicative
- RS Stock No.:
- 792-0908
- Mfr. Part No.:
- BSS84AK,215
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Series | BSS84AK | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 420mW | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 0.26nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Series BSS84AK | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 420mW | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 0.26nC | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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