N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA06DP-T1-GE3

RS Stock No.:: 787-9373
Mfr. Part No.:: SIRA06DP-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA06DP-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (On a Tape of 5)

MYR4.714

Temporarily out of stock - back order for despatch 22/02/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Tape**
5 - 45	MYR4.714	MYR23.57
50 +	MYR4.572	MYR22.86

**price indicative

RS Stock No.:: 787-9373
Mfr. Part No.:: SIRA06DP-T1-GE3
Manufacturer:: Vishay

SiRA06DP, N-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	40 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK SO
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	3.5 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	62.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +20 V
Typical Gate Charge @ Vgs	51 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Length	6.25mm
Width	5.26mm
Height	1.12mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA06DP-T1-GE3

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

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