STMicroelectronics STripFET H7 Type N-Channel MOSFET, 110 A, 100 V Enhancement, 8-Pin PowerFLAT
- RS Stock No.:
- 786-3726P
- Mfr. Part No.:
- STL110N10F7
- Manufacturer:
- STMicroelectronics
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Subtotal 5 units (supplied on a continuous strip)*
MYR56.70
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- 2,945 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 5 + | MYR11.34 |
*price indicative
- RS Stock No.:
- 786-3726P
- Mfr. Part No.:
- STL110N10F7
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | STripFET H7 | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 5.4mm | |
| Height | 0.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series STripFET H7 | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 5.4mm | ||
Height 0.95mm | ||
Automotive Standard No | ||
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.