onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC FDS6912A

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Subtotal (1 pack of 25 units)*

MYR71.00

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Supply shortage
  • Plus 25 left, shipping from 05 January 2026
  • Plus 7,875 left, shipping from 12 January 2026
Our current stock is limited and our suppliers are expecting shortages.
Units
Per Unit
Per Pack*
25 - 600MYR2.84MYR71.00
625 - 1225MYR2.74MYR68.50
1250 +MYR2.603MYR65.08

*price indicative

Packaging Options:
RS Stock No.:
772-9225
Mfr. Part No.:
FDS6912A
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

PowerTrench

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

44mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

5.8nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.6W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.75V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Standards/Approvals

No

Width

4 mm

Height

1.5mm

Length

5mm

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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