STMicroelectronics MDmesh Type N-Channel MOSFET, 12 A, 500 V Enhancement, 3-Pin TO-220 STF14NM50N
- RS Stock No.:
- 761-2754
- Mfr. Part No.:
- STF14NM50N
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
MYR10.99
FREE delivery for orders over RM 500.00
In Stock
- 22 unit(s) ready to ship from another location
- Plus 28 unit(s) shipping from 12 January 2026
- Plus 50 unit(s) shipping from 04 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 12 | MYR10.99 |
| 13 - 24 | MYR10.76 |
| 25 + | MYR10.46 |
*price indicative
- RS Stock No.:
- 761-2754
- Mfr. Part No.:
- STF14NM50N
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Series | MDmesh | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 320mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 16.4mm | |
| Standards/Approvals | No | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Series MDmesh | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 320mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 16.4mm | ||
Standards/Approvals No | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
N-Channel MDmesh™, 500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics MDmesh Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 STP12NM50
- STMicroelectronics MDmesh Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 STP14NM50N
- STMicroelectronics MDmesh Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 STP28NM50N
- STMicroelectronics MDmesh Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 STP19NM50N
- STMicroelectronics MDmesh Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 STF28NM50N