STMicroelectronics FDmesh Type N-Channel FDmesh II Power MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-220FP STF11NM60ND
- RS Stock No.:
- 761-2745
- Mfr. Part No.:
- STF11NM60ND
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
MYR16.42
FREE delivery for orders over RM 500.00
Last RS stock
- Plus 5 unit(s) shipping from 23 February 2026
- Final 165 unit(s) shipping from 02 March 2026
Units | Per Unit |
|---|---|
| 1 - 12 | MYR16.42 |
| 13 - 24 | MYR13.50 |
| 25 + | MYR13.21 |
*price indicative
- RS Stock No.:
- 761-2745
- Mfr. Part No.:
- STF11NM60ND
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | FDmesh II Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220FP | |
| Series | FDmesh | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.45Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Maximum Power Dissipation Pd | 90W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 16.4mm | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type FDmesh II Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220FP | ||
Series FDmesh | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.45Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Maximum Power Dissipation Pd 90W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 16.4mm | ||
Width 4.6 mm | ||
Automotive Standard No | ||
N-Channel FDmesh™ Power MOSFET, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics FDmesh Type N-Channel FDmesh II Power MOSFET 600 V Enhancement, 3-Pin TO-220FP
- STMicroelectronics FDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- STMicroelectronics FDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD13NM60ND
- STMicroelectronics FDmesh Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics FDmesh Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-220 STP11NM60ND
- STMicroelectronics FDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- STMicroelectronics FDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics FDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247