STMicroelectronics STripFET II Type N-Channel MOSFET, 17 A, 250 V Enhancement, 3-Pin TO-252 STD17NF25
- RS Stock No.:
- 761-2701P
- Mfr. Part No.:
- STD17NF25
- Manufacturer:
- STMicroelectronics
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View bulk pricing optionSubtotal 625 units (supplied on a reel)*
MYR4,127.50
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In Stock
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Units | Per Unit |
|---|---|
| 625 - 1245 | MYR6.604 |
| 1250 + | MYR5.386 |
*price indicative
- RS Stock No.:
- 761-2701P
- Mfr. Part No.:
- STD17NF25
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-252 | |
| Series | STripFET II | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 165mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 90W | |
| Typical Gate Charge Qg @ Vgs | 29.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-252 | ||
Series STripFET II | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 165mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 90W | ||
Typical Gate Charge Qg @ Vgs 29.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Height 2.4mm | ||
Automotive Standard No | ||
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.