N-Channel MOSFET, 5.8 A, 900 V, 3-Pin TO-247 STMicroelectronics STW7NK90Z
- RS Stock No.:
- 761-0345
- Mfr. Part No.:
- STW7NK90Z
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)**
MYR92.21
Temporarily out of stock - back order for despatch 11/08/2025, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
|---|---|---|
| 5 - 5 | MYR18.442 | MYR92.21 |
| 10 - 10 | MYR16.62 | MYR83.10 |
| 15 + | MYR16.616 | MYR83.08 |
**price indicative
- RS Stock No.:
- 761-0345
- Mfr. Part No.:
- STW7NK90Z
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.8 A | |
| Maximum Drain Source Voltage | 900 V | |
| Series | MDmesh, SuperMESH | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 140 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 46.5 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 5.15mm | |
| Length | 15.75mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.15mm | |
Select all | ||
|---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.8 A | ||
Maximum Drain Source Voltage 900 V | ||
Series MDmesh, SuperMESH | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 46.5 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 5.15mm | ||
Length 15.75mm | ||
Minimum Operating Temperature -55 °C | ||
Height 20.15mm | ||
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