STMicroelectronics Single STripFET II 1 N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-220 STP80NF55L-06
- RS Stock No.:
- 761-0193P
- Mfr. Part No.:
- STP80NF55L-06
- Manufacturer:
- STMicroelectronics
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 761-0193P
- Mfr. Part No.:
- STP80NF55L-06
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Transistor Configuration | Single | |
| Series | STripFET II | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 80 A | |
| Maximum Drain Source Voltage (Vds) | 55 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-220 | |
| Height | 15.75 mm | |
| Length | 10.4 mm | |
| Maximum Drain Source Resistance (Rds) | 8 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 16 V, -16 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 300 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole | |
| Width | 4.6 mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Transistor Configuration Single | ||
Series STripFET II | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 80 A | ||
Maximum Drain Source Voltage (Vds) 55 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-220 | ||
Height 15.75 mm | ||
Length 10.4 mm | ||
Maximum Drain Source Resistance (Rds) 8 mΩ | ||
Maximum Gate Source Voltage (Vgs) 16 V, -16 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 300 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole | ||
Width 4.6 mm | ||
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.