Specifications

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Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3A
	Maximum Drain Source Voltage Vds	250V
	Package Type	SOIC
	Series	UltraFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	225mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2.5W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	32nC
	Maximum Operating Temperature	150°C
	Height	1.5mm
	Width	5 mm
	Length	4mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3A
	Maximum Drain Source Voltage Vds 250V
	Package Type SOIC
	Series UltraFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 225mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2.5W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 32nC
	Maximum Operating Temperature 150°C
	Height 1.5mm
	Width 5 mm
	Length 4mm
	Standards/Approvals No
	Automotive Standard No

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.

Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi UltraFET Type N-Channel MOSFET, 3 A, 250 V Enhancement, 8-Pin SOIC FDS2734

UltraFET® MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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