Infineon OptiMOS 3 Type N-Channel MOSFET, 21 A, 150 V Enhancement, 8-Pin TDSON BSC520N15NS3GATMA1

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Subtotal (1 pack of 2 units)*

MYR11.97

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Per Unit
Per Pack*
2 - 1248MYR5.985MYR11.97
1250 - 2498MYR5.675MYR11.35
2500 +MYR5.605MYR11.21

*price indicative

Packaging Options:
RS Stock No.:
754-5323
Mfr. Part No.:
BSC520N15NS3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

150V

Package Type

TDSON

Series

OptiMOS 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

57W

Typical Gate Charge Qg @ Vgs

8.7nC

Maximum Operating Temperature

150°C

Height

1.1mm

Width

6.1 mm

Standards/Approvals

No

Length

5.35mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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