STMicroelectronics Single PD55003L-E Type N-Channel RF MOSFET, 2.5 A, 40 V Enhancement, 14-Pin PowerFLAT
- RS Stock No.:
- 714-6771P
- Mfr. Part No.:
- PD55003L-E
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal 750 units (supplied on a reel)*
MYR24,142.50
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 29 April 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 750 - 1499 | MYR32.19 |
| 1500 + | MYR31.87 |
*price indicative
- RS Stock No.:
- 714-6771P
- Mfr. Part No.:
- PD55003L-E
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | RF MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | PD55003L-E | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 14 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | -65°C | |
| Transistor Configuration | Single | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 0.88mm | |
| Typical Power Gain | 19dB | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type RF MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series PD55003L-E | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 14 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature -65°C | ||
Transistor Configuration Single | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 0.88mm | ||
Typical Power Gain 19dB | ||
Automotive Standard No | ||
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.