DiodesZetex Type P-Channel MOSFET, 6.4 A, 40 V Enhancement, 4-Pin SOT-223 ZXMP4A16GTA
- RS Stock No.:
- 708-2469
- Mfr. Part No.:
- ZXMP4A16GTA
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
MYR37.91
FREE delivery for orders over RM 500.00
In Stock
- Plus 210 unit(s) shipping from 26 January 2026
- Plus 34,910 unit(s) shipping from 02 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 240 | MYR3.791 | MYR37.91 |
| 250 - 490 | MYR3.713 | MYR37.13 |
| 500 + | MYR3.602 | MYR36.02 |
*price indicative
- RS Stock No.:
- 708-2469
- Mfr. Part No.:
- ZXMP4A16GTA
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.4A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26.1nC | |
| Maximum Power Dissipation Pd | 3.9W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Width | 3.7 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.4A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26.1nC | ||
Maximum Power Dissipation Pd 3.9W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Height 1.8mm | ||
Width 3.7 mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
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