Toshiba TK Type N-Channel MOSFET, 15 A, 500 V Enhancement, 3-Pin TO-3PN TK20J50D(F)
- RS Stock No.:
- 695-5391
- Mfr. Part No.:
- TK20J50D(F)
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
MYR15.94
FREE delivery for orders over RM 500.00
In Stock
- 6 unit(s) ready to ship from another location
- Plus 15 unit(s) shipping from 21 January 2026
- Plus 85 unit(s) shipping from 27 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 19 | MYR15.94 |
| 20 - 49 | MYR15.46 |
| 50 + | MYR15.02 |
*price indicative
- RS Stock No.:
- 695-5391
- Mfr. Part No.:
- TK20J50D(F)
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-3PN | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 270mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 280W | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Length | 40.5mm | |
| Height | 19mm | |
| Width | 4.8 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-3PN | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 270mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 280W | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Length 40.5mm | ||
Height 19mm | ||
Width 4.8 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Related links
- Toshiba TK Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-3PN
- Toshiba TK Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-3PN TK9J90E
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Toshiba TK Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220