Infineon HEXFET N-Channel Power MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247AC IRFP4568PBF
- RS Stock No.:
- 688-7018
- Distrelec Article No.:
- 302-84-053
- Mfr. Part No.:
- IRFP4568PBF
- Manufacturer:
- Infineon
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MYR29.28
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Units | Per Unit |
|---|---|
| 1 - 12 | MYR29.28 |
| 13 + | MYR28.40 |
*price indicative
- RS Stock No.:
- 688-7018
- Distrelec Article No.:
- 302-84-053
- Mfr. Part No.:
- IRFP4568PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 171A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-247AC | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 684W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 151nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.31mm | |
| Length | 15.87mm | |
| Height | 20.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 171A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 684W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 151nC | ||
Maximum Operating Temperature 175°C | ||
Width 5.31mm | ||
Length 15.87mm | ||
Height 20.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 171A Maximum Continuous Drain Current, 517W Maximum Power Dissipation - IRFP4568PBF
This N-channel MOSFET is designed for high efficiency and consistent performance across various electronic circuits. Its robust features cater to power management and switching applications. The TO-247AC package facilitates effective thermal management and simplifies installation in through-hole configurations.
Features & Benefits
• Enhanced body diode recovery characteristics improve reliability
• Low on-resistance minimises power losses during operation
• Maximum power dissipation capability of 517 W accommodates high-demand application.
• Wide operating temperature range of -55°C to +175°C ensures functionality in diverse environment.
• Excellent gate threshold voltages optimise performance during switching actions.
• Single transistor configuration streamlines circuit designs for ease of use
Applications
• High-efficiency synchronous rectification
• Uninterruptible power supplies for dependable backup
• High-speed power switching circuits
• Suitable for hard-switched and high-frequency
What is the maximum continuous drain current this device can support?
The device supports a maximum continuous drain current of 171 A under optimal conditions.
How does the device manage heat during operation?
With a maximum power dissipation of 517W, the device effectively handles heat generated during operation.
What are the typical gate charge requirements?
The typical gate charge is approximately 151 nC at a gate-to-source voltage of 10 V, ensuring efficient switching performance.
Can it withstand extreme temperature variations?
Yes, it operates within a temperature range of -55°C to +175°C, making it suitable for various environmental conditions.
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Related links
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