Infineon HEXFET Type N-Channel MOSFET, 160 A, 60 V Enhancement, 3-Pin TO-220 IRFB3306PBF

RS Stock No.:: 688-6910
Distrelec Article No.:: 304-35-443
Mfr. Part No.:: IRFB3306PBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 160 A, 60 V Enhancement, 3-Pin TO-220 IRFB3306PBF

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Bulk discount available

Subtotal (1 pack of 2 units)*

MYR19.10

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In Stock

Plus 8 unit(s) shipping from 16 March 2026
Plus 2,436 unit(s) shipping from 23 March 2026

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Units	Per Unit	Per Pack*
2 - 24	MYR9.55	MYR19.10
26 +	MYR9.265	MYR18.53

*price indicative

RS Stock No.:: 688-6910
Distrelec Article No.:: 304-35-443
Mfr. Part No.:: IRFB3306PBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	160A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	85nC
	Maximum Power Dissipation Pd	230W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.66mm
	Width	4.82 mm
	Height	9.02mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 160A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 85nC
	Maximum Power Dissipation Pd 230W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.66mm
	Width 4.82 mm
	Height 9.02mm
	Automotive Standard No

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