N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220 STMicroelectronics STP16N65M5
- RS Stock No.:
- 687-5298
- Mfr. Part No.:
- STP16N65M5
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 2 units)**
MYR31.45
Temporarily out of stock - back order for despatch 26/06/2025, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
---|---|---|
2 - 12 | MYR15.725 | MYR31.45 |
14 - 24 | MYR13.045 | MYR26.09 |
26 + | MYR12.935 | MYR25.87 |
**price indicative
- RS Stock No.:
- 687-5298
- Mfr. Part No.:
- STP16N65M5
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 12 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | TO-220 | |
Series | MDmesh M5 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 299 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 90 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | +25 V | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 31 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Length | 10.4mm | |
Width | 4.6mm | |
Transistor Material | Si | |
Height | 9.15mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 | ||
Series MDmesh M5 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 299 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 90 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +25 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 31 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Width 4.6mm | ||
Transistor Material Si | ||
Height 9.15mm | ||
Minimum Operating Temperature -55 °C | ||
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