N-Channel MOSFET, 12 A, 650 V, 3-Pin DPAK STMicroelectronics STD16N65M5
- RS Stock No.:
- 168-7560
- Mfr. Part No.:
- STD16N65M5
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 reel of 2500 units)**
MYR29,490.00
2500 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Reel** |
|---|---|---|
| 2500 - 2500 | MYR11.796 | MYR29,490.00 |
| 5000 - 7500 | MYR11.537 | MYR28,842.50 |
| 10000 + | MYR11.325 | MYR28,312.50 |
**price indicative
- RS Stock No.:
- 168-7560
- Mfr. Part No.:
- STD16N65M5
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | DPAK (TO-252) | |
| Series | MDmesh M5 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 279 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 90 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 6.2mm | |
| Length | 6.6mm | |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V | |
| Transistor Material | Si | |
| Height | 2.4mm | |
Select all | ||
|---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type DPAK (TO-252) | ||
Series MDmesh M5 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 279 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 90 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 6.2mm | ||
Length 6.6mm | ||
Typical Gate Charge @ Vgs 31 nC @ 10 V | ||
Transistor Material Si | ||
Height 2.4mm | ||
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