DiodesZetex ZXMN10A07Z Type N-Channel MOSFET, 1.4 A, 100 V Enhancement, 3-Pin SOT-89 ZXMN10A07ZTA
- RS Stock No.:
- 669-7401
- Mfr. Part No.:
- ZXMN10A07ZTA
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
MYR18.53
FREE delivery for orders over RM 500.00
In Stock
- 10 unit(s) ready to ship from another location
- Plus 160 unit(s) shipping from 26 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 240 | MYR1.853 | MYR18.53 |
| 250 - 490 | MYR1.813 | MYR18.13 |
| 500 + | MYR1.759 | MYR17.59 |
*price indicative
- RS Stock No.:
- 669-7401
- Mfr. Part No.:
- ZXMN10A07ZTA
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-89 | |
| Series | ZXMN10A07Z | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.95V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Power Dissipation Pd | 2.6W | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.6 mm | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Length | 4.6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-89 | ||
Series ZXMN10A07Z | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.95V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Power Dissipation Pd 2.6W | ||
Maximum Operating Temperature 150°C | ||
Width 2.6 mm | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Length 4.6mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
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