Vishay IRF644 N-Channel MOSFET, 14 A, 250 V Enhancement, 3-Pin TO-220 IRF644PBF
- RS Stock No.:
- 542-9305
- Distrelec Article No.:
- 301-91-567
- Mfr. Part No.:
- IRF644PBF
- Manufacturer:
- Vishay
This image is representative of the product range
Get a bulk buy discount
Add 13 more to save MYR0.39
View bulk pricing optionsSubtotal (1 unit)*
MYR7.67
FREE delivery for orders over RM 150.00
In Stock
- Plus 32 unit(s) shipping from 09 November 2026
- Plus 790 unit(s) shipping from 16 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Saving |
|---|---|---|
| 1 - 12 | MYR7.67 | - |
| 13 - 24 | MYR7.64 | MYR0.39 |
| 25 + | MYR7.57 | MYR2.50 |
*price indicative
- RS Stock No.:
- 542-9305
- Distrelec Article No.:
- 301-91-567
- Mfr. Part No.:
- IRF644PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | IRF644 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.01mm | |
| Standards/Approvals | No | |
| Width | 4.7mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series IRF644 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 9.01mm | ||
Standards/Approvals No | ||
Width 4.7mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay IRF644 N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220 IRF644PBF
- Vishay IRF N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263 IRF644SPBF
- onsemi UltraFET N-Channel MOSFET 250 V Enhancement, 8-Pin WDFN FDMS2734
- onsemi UltraFET N-Channel MOSFET 250 V Enhancement, 8-Pin WDFN
- Vishay E N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHF080N60E-GE3
- Vishay SIHF N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SIHF074N65E-GE3
- Vishay IRF N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF530PBF
- Vishay IRFI N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRFIZ24GPBF