N-Channel MOSFET, 84 A, 60 V, 3-Pin TO-220AB Infineon IRF1010EPBF

RS Stock No.:: 541-1714
Distrelec Article No.:: 303-41-261
Mfr. Part No.:: IRF1010EPBF
Manufacturer:: Infineon

N-Channel MOSFET, 84 A, 60 V, 3-Pin TO-220AB Infineon IRF1010EPBF

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)**

MYR5.05

237 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR700.00

Units	Per Unit
1 - 12	MYR5.05
13 - 24	MYR4.94
25 +	MYR4.81

**price indicative

RS Stock No.:: 541-1714
Distrelec Article No.:: 303-41-261
Mfr. Part No.:: IRF1010EPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 84A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF1010EPBF

This MOSFET is designed for high performance in various electronic applications. Its low on-resistance characteristics and capacity for high continuous drain currents make it a key component for engineers in automation and power management systems. The device performs well in rugged environments, ensuring consistent operation across a broad temperature range.

Features & Benefits

• Low RDS(on) contributes to minimal power loss at high currents
• High continuous drain current capability of up to 84A enhances efficiency
• Compact TO-220AB package allows for easy mounting
• Fast switching capabilities improve overall circuit performance
• Fully avalanche rated for added device protection

Applications

• Power supply circuits for efficient voltage regulation
• Motor control systems for precise operation
• Driver circuits in high current
• Signal amplification in electronic devices

What are the thermal resistance values for this product?

The junction-to-case thermal resistance is 0.75°C/W, and the case-to-sink thermal resistance on a flat, greased surface is 0.50°C/W, enabling efficient heat dissipation.

Can it operate safely in environments with high temperatures?

Yes, it functions effectively at temperatures up to 175°C, making it suitable for applications where heat is a concern.

What type of current can it handle at high temperatures?

At a case temperature of 100°C, it can manage a continuous drain current of 59A, ensuring dependable operation under load.

How does the gate charge affect its performance?

With a typical gate charge of 130 nC at 10V, it enables rapid switching and efficient operation in dynamic applications.

What is the maximum gate-to-source voltage supported?

The device supports a maximum gate-to-source voltage of ±20V, providing flexibility in driving circuits and ensuring safe operation.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	84 A
Maximum Drain Source Voltage	60 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	12 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	200 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	130 nC @ 10 V
Width	4.69mm
Length	10.54mm
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	8.77mm
Forward Diode Voltage	1.3V