N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 STMicroelectronics STP80NF10
- RS Stock No.:
- 485-7888
- Mfr. Part No.:
- STP80NF10
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)**
MYR19.44
16 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit |
|---|---|
| 1 - 12 | MYR19.44 |
| 13 - 64 | MYR19.05 |
| 65 + | MYR15.67 |
**price indicative
- RS Stock No.:
- 485-7888
- Mfr. Part No.:
- STP80NF10
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220 | |
| Series | STripFET II | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 15 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.4mm | |
| Width | 4.6mm | |
| Typical Gate Charge @ Vgs | 135 nC @ 10 V | |
| Transistor Material | Si | |
| Height | 9.15mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220 | ||
Series STripFET II | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 15 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 10.4mm | ||
Width 4.6mm | ||
Typical Gate Charge @ Vgs 135 nC @ 10 V | ||
Transistor Material Si | ||
Height 9.15mm | ||
Minimum Operating Temperature -55 °C | ||
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