Vishay SUM Type N-Channel MOSFET, 150 A, 100 V Enhancement, 7-Pin TO-263-7L SUM70042M-GE3
- RS Stock No.:
- 280-0035
- Mfr. Part No.:
- SUM70042M-GE3
- Manufacturer:
- Vishay
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Subtotal (1 unit)*
MYR28.54
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Units | Per Unit |
|---|---|
| 1 - 24 | MYR28.54 |
| 25 - 49 | MYR21.38 |
| 50 - 99 | MYR20.95 |
| 100 - 249 | MYR19.01 |
| 250 + | MYR18.64 |
*price indicative
- RS Stock No.:
- 280-0035
- Mfr. Part No.:
- SUM70042M-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SUM | |
| Package Type | TO-263-7L | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.00383Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.74V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 126nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 10.414mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SUM | ||
Package Type TO-263-7L | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.00383Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.74V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 126nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 10.414mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Related links
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