Vishay SIJH N-Channel MOSFET, 277 A, 100 V Enhancement, 4-Pin 8x8L SIJH5100E-T1-GE3
- RS Stock No.:
- 279-9937
- Mfr. Part No.:
- SIJH5100E-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Currently unavailable
Sorry, we don't know when this will be back in stock.
Alternative
This product is not currently available. Here is our alternative recommendation.
Each
MYR30.25
- RS Stock No.:
- 279-9937
- Mfr. Part No.:
- SIJH5100E-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 277A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | 8x8L | |
| Series | SIJH | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.00189Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 128nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 7.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 277A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type 8x8L | ||
Series SIJH | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.00189Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 128nC | ||
Maximum Operating Temperature 150°C | ||
Length 7.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Related links
- Vishay SIJH N-Channel MOSFET 100 V Enhancement, 4-Pin 8x8L SIJH5100E-T1-GE3
- Vishay SIJH N-Channel MOSFET 150 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH5700E-T1-GE3
- Vishay SQJQ936EL 2 N-Channel MOSFET 40 V Enhancement, 4-Pin 8x8L SQJQ936EL-T1_GE3
- Vishay TrenchFET N-Channel MOSFET 60 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH602E-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 100 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH112E-T1-GE3
- Vishay E N-Channel Power MOSFET 600 V Enhancement, 4-Pin PowerPAK
- Vishay TrenchFET N-Channel MOSFET 25 V Enhancement, 4-Pin SO-8
- Vishay E N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK SIHH26N60E-T1-GE3