Infineon IPD Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 273-3004
- Mfr. Part No.:
- IPD079N06L3GATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
MYR25.82
FREE delivery for orders over RM 500.00
In Stock
- 2,360 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | MYR5.164 | MYR25.82 |
| 50 - 95 | MYR3.974 | MYR19.87 |
| 100 - 245 | MYR3.678 | MYR18.39 |
| 250 - 995 | MYR3.612 | MYR18.06 |
| 1000 + | MYR3.544 | MYR17.72 |
*price indicative
- RS Stock No.:
- 273-3004
- Mfr. Part No.:
- IPD079N06L3GATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.731 mm | |
| Length | 10.48mm | |
| Height | 6.223mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Width 6.731 mm | ||
Length 10.48mm | ||
Height 6.223mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET is a perfect choice for synchronous rectification in switched mode power supplies such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications
Highest system efficiency
Less paralleling required
Increased power density
Related links
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- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD048N06L3GATMA1