Vishay SiRA N-Channel MOSFET, 128 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SiRA54ADP-T1-RE3
- RS Stock No.:
- 268-8338
- Mfr. Part No.:
- SiRA54ADP-T1-RE3
- Manufacturer:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
MYR47.49
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | MYR9.498 | MYR47.49 |
| 50 - 95 | MYR9.022 | MYR45.11 |
| 100 - 245 | MYR8.12 | MYR40.60 |
| 250 - 995 | MYR6.904 | MYR34.52 |
| 1000 + | MYR5.524 | MYR27.62 |
*price indicative
- RS Stock No.:
- 268-8338
- Mfr. Part No.:
- SiRA54ADP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 128A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiRA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0022Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65.7W | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 128A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK SO-8 | ||
Series SiRA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0022Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65.7W | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It is single configuration device and It is used an application as synchronous rectification and motor drive control.
ROHS compliant
UIS tested 100 percent
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