Infineon HEXFET Type N-Channel MOSFET, 382 A, 24 V, 3-Pin TO-262
- RS Stock No.:
- 260-5054
- Mfr. Part No.:
- AUIRF1324WL
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
MYR2,294.00
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In Stock
- Plus 950 unit(s) shipping from 29 June 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | MYR45.88 | MYR2,294.00 |
| 100 - 450 | MYR44.963 | MYR2,248.15 |
| 500 - 950 | MYR44.063 | MYR2,203.15 |
| 1000 + | MYR43.182 | MYR2,159.10 |
*price indicative
- RS Stock No.:
- 260-5054
- Mfr. Part No.:
- AUIRF1324WL
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 382A | |
| Maximum Drain Source Voltage Vds | 24V | |
| Package Type | TO-262 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.65mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 382A | ||
Maximum Drain Source Voltage Vds 24V | ||
Package Type TO-262 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 9.65mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Widelead HEXFET Power MOSFET is specifically design for automotive applications. It features175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
Advanced process technology
Ultra low on resistance
Fast switching
Repetitive avalanche allowed up to Tjmax
Related links
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