Infineon IPT N-Channel MOSFET, 365 A, 100 V Enhancement, 16-Pin HDSOP IPTC014N10NM5ATMA1

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Subtotal (1 reel of 1800 units)*

MYR32,157.00

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  • 1,800 unit(s) shipping from 07 October 2027
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Units
Per Unit
Per Reel*
1800 - 1800MYR17.865MYR32,157.00
3600 - 3600MYR17.329MYR31,192.20
5400 +MYR16.81MYR30,258.00

*price indicative

RS Stock No.:
259-2730
Mfr. Part No.:
IPTC014N10NM5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

365A

Maximum Drain Source Voltage Vds

100V

Series

IPT

Package Type

HDSOP

Mount Type

Surface Mount

Pin Count

16

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

168nC

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

375W

Forward Voltage Vf

880mV

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC 61249-2-21

Automotive Standard

No

Infineon IPT Series MOSFET, 100V Maximum Drain-Source Voltage, 365A Maximum Continuous Drain Current - IPTC014N10NM5ATMA1


This MOSFET is an enhancement-mode N-channel transistor designed for high-current switching in demanding electronic systems. It operates across a wide ambient range and is packaged for low-profile board mounting, offering substantial power handling for applications requiring robust conduction and thermal endurance.

Features and Benefits:


• Low conduction resistance reduces on-state losses for efficient power transfer
• High continuous drain current enables sustained heavy-current operation
• 375W power dissipation capacity supports high-power switching tasks
• 168nC gate charge balances drive energy and switching dynamics
• Wide operating temperature range allows operation in extreme environments

Applications


• Suitable for high-current motor drive stages
• Ideal for power-supply output stages and converters
• Used with battery management for high-discharge circuits
• Can be used for industrial inverter switching assemblies

What gate voltage tolerance should be observed during operation?


The gate must not exceed a Peak of 20V relative to the source to avoid damage.

How does the device handle thermal stress during continuous operation?


It can dissipate up to 375W provided appropriate board thermal management and cooling are applied.

What resistance performance can be expected for conduction losses?


The on-resistance is specified at 1.4mΩ, which defines low conduction losses under rated conditions.

What temperature extremes can it withstand during storage or use?


It is rated to operate from -55°C up to 175°C, permitting use across a very wide thermal range.

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