Infineon IPD N-Channel MOSFET, 118 A, 100 V N TO-252 IPD052N10NF2SATMA1
- RS Stock No.:
- 259-2601
- Mfr. Part No.:
- IPD052N10NF2SATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2000 units)*
MYR8,502.00
FREE delivery for orders over RM 150.00
Temporarily out of stock
- Shipping from 15 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | MYR4.251 | MYR8,502.00 |
| 4000 - 4000 | MYR4.123 | MYR8,246.00 |
| 6000 + | MYR4.00 | MYR8,000.00 |
*price indicative
- RS Stock No.:
- 259-2601
- Mfr. Part No.:
- IPD052N10NF2SATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 118A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 118A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon StrongIRFET 2 power MOSFETs are optimized for a broad range of applications like SMPS, motor drive, battery powered, battery management, UPS, and light electric vehicles. This new technology offers up to 40 percent RDS(on) improvement and up to 60 percent lower Qg compared to the previous StrongIRFET devices, translating into higher power efficiency for improved overall system performance. Increased current ratings allow for higher current carrying capability, eliminating the need to parallel multiple devices translating to lower BOM costs and board savings.
Broad availability from distribution partners
Excellent price/performance ratio
Ideal for high and low switching frequencies
Industry standard footprint through-hole package
High current rating
Related links
- Infineon IPD N-Channel MOSFET 100 V N TO-252 IPD052N10NF2SATMA1
- Infineon IPD N-Channel MOSFET 100 V N TO-252 IPD130N10NF2SATMA1
- Infineon IPD N-Channel MOSFET 200 V N TO-252 IPD320N20N3GATMA1
- Infineon IPD N-Channel MOSFET 650 V N TO-252 IPD60R600PFD7SAUMA1
- Infineon IPD N-Channel MOSFET 80 V N TO-252 IPD055N08NF2SATMA1
- Infineon IPD N-Channel MOSFET 60 V N TO-252 IPD220N06L3GATMA1
- Infineon IPD N-Channel MOSFET 40 V N TO-252 IPD50N04S4L08ATMA1
- Infineon IPD N-Channel MOSFET 650 V N TO-252 IPD60R360PFD7SAUMA1