Infineon SN7002N N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT SN7002NH6433XTMA1
- RS Stock No.:
- 258-4028
- Mfr. Part No.:
- SN7002NH6433XTMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 10000 units)*
MYR2,380.00
FREE delivery for orders over RM 150.00
Temporarily out of stock
- Shipping from 08 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 10000 - 10000 | MYR0.238 | MYR2,380.00 |
| 20000 - 20000 | MYR0.214 | MYR2,140.00 |
| 30000 + | MYR0.193 | MYR1,930.00 |
*price indicative
- RS Stock No.:
- 258-4028
- Mfr. Part No.:
- SN7002NH6433XTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT | |
| Series | SN7002N | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 1.15nC | |
| Maximum Power Dissipation Pd | 0.36W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, AEC Q101 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT | ||
Series SN7002N | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 1.15nC | ||
Maximum Power Dissipation Pd 0.36W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, AEC Q101 | ||
Automotive Standard No | ||
The Infineon SIPMOS small-signal-transistor is qualified according to AEC Q101 and halogen-free according to IEC61249-2-21.
N-Channel
Enhancement mode
dv/dt rated
Related links
- Infineon SN7002N N-Channel MOSFET 60 V Enhancement, 3-Pin SOT SN7002NH6433XTMA1
- DiodesZetex N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- DiodesZetex N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 ZVN4106FTA
- Infineon SIPMOS N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 SN7002NH6327XTSA2
- Infineon SN7002I N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 SN7002IXTSA1
- Nexperia BSS138AKA N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS138AKAR
- Microchip 2N7000 N-Channel MOSFET 60 V Enhancement, 3-Pin TO-92 2N7000-G
- onsemi 2N7000 N-Channel MOSFET 60 V Enhancement, 3-Pin TO-92 2N7000
