Infineon iPB Type N-Channel MOSFET, 11 A, 600 V N TO-263 IPB60R299CPAATMA1
- RS Stock No.:
- 258-3809
- Mfr. Part No.:
- IPB60R299CPAATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 unit)*
MYR17.63
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In Stock
- Plus 690 unit(s) shipping from 16 March 2026
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Units | Per Unit |
|---|---|
| 1 - 9 | MYR17.63 |
| 10 - 99 | MYR16.75 |
| 100 - 249 | MYR15.75 |
| 250 - 499 | MYR14.65 |
| 500 + | MYR13.48 |
*price indicative
- RS Stock No.:
- 258-3809
- Mfr. Part No.:
- IPB60R299CPAATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 40.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 40.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS power transistor is high peak current capability, its automotive AEC Q101 qualified.
Ultra low gate charge
Extreme dv/dt rated
Related links
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- Infineon iPB Type N-Channel MOSFET 650 V N TO-263
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