Infineon iPB Type N-Channel MOSFET, 100 A, 120 V Enhancement TO-263 IPB100N12S305ATMA1

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MYR16.24

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Units
Per Unit
1 - 9MYR16.24
10 - 99MYR15.75
100 - 249MYR15.12
250 - 499MYR14.36
500 +MYR13.50

*price indicative

Packaging Options:
RS Stock No.:
258-3796
Mfr. Part No.:
IPB100N12S305ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

120V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Maximum Drain Source Resistance Rds

4.8mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

139nC

Maximum Power Dissipation Pd

300W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T power-transistor is N-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

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