Infineon IAUC Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TDSON IAUC120N04S6N013ATMA1
- RS Stock No.:
- 258-0918
- Mfr. Part No.:
- IAUC120N04S6N013ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
MYR11.89
FREE delivery for orders over RM 500.00
In Stock
- 4,938 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | MYR5.945 | MYR11.89 |
| 10 - 98 | MYR5.645 | MYR11.29 |
| 100 - 248 | MYR5.305 | MYR10.61 |
| 250 - 498 | MYR4.93 | MYR9.86 |
| 500 + | MYR4.535 | MYR9.07 |
*price indicative
- RS Stock No.:
- 258-0918
- Mfr. Part No.:
- IAUC120N04S6N013ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IAUC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 115W | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IAUC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 115W | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS 6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products which enables the customer to find the best product fit in the their applications. All of this enables the best-in-class product FOM and performance on the market. The new SS08 product offers 120A continuous current ratings, which is >25% higher than the standard DPAK at almost half of its footprint area.
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
Related links
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon IAUC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IAUC90N10S5N062ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IAUC120N04S6L012ATMA1
- Infineon IAUC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON IAUC120N06S5N017ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IAUC120N04S6N010ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IAUC120N04S6L009ATMA1
- Infineon IAUC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON IAUC120N06S5L032ATMA1