Infineon MOSFET, 150 A, 1200 V AG-EASY1BS-1
- RS Stock No.:
- 258-0846
- Mfr. Part No.:
- FF08MR12W1MA1B11ABPSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tray of 24 units)*
MYR32,228.256
FREE delivery for orders over RM 500.00
In Stock
- 24 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tray* |
|---|---|---|
| 24 - 24 | MYR1,342.844 | MYR32,228.26 |
| 48 - 48 | MYR1,208.558 | MYR29,005.39 |
| 72 + | MYR1,087.703 | MYR26,104.87 |
*price indicative
- RS Stock No.:
- 258-0846
- Mfr. Part No.:
- FF08MR12W1MA1B11ABPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | AG-EASY1BS-1 | |
| Maximum Drain Source Resistance Rds | 9.8mΩ | |
| Forward Voltage Vf | 5.95V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type AG-EASY1BS-1 | ||
Maximum Drain Source Resistance Rds 9.8mΩ | ||
Forward Voltage Vf 5.95V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon automotive CoolSiCTM EasyPACKTM1B is a half bridge module which combines the benefits of Infineon robust silicon carbide technology with a very compact and flexible package for hybrid and electric vehicles. The power module implements the new CoolSiCTM automotive MOSFET 1200V Gen1, optimized for high voltage applications like DC/DC converter and auxiliary inverter. The chipset offers benchmark current density, high block voltage and reduced switching losses, which allows compact designs and helps to improve system efficiency, as well as allows a reliable operation under harsh environmental conditions.
Intrinsic diode with low reverse recovery
Low stray inductance 5nH
Blocking voltage 1200V
Low switching losses
Integrated NTC temperature sensor
Related links
- Infineon MOSFET 1200 V AG-EASY1BS-1 FF08MR12W1MA1B11ABPSA1
- Infineon FF6MR Type N-Channel MOSFET 1200 V Enhancement AG-EASY2B FF6MR20W2M1HB70BPSA1
- Infineon FF150R12RT4HOSA1 Series IGBT Module Panel Mount
- Infineon CoolSiC Trench MOSFET Type N-Channel MOSFET 1200 V Enhancement EasyDUAL FF6MR12W2M1HPB11BPSA1
- Infineon FS150R12N2T7B15BPSA1 IGBT, 150 A 1200 V
- Infineon FS150R12N2T7B54BPSA1 IGBT, 150 A 1200 V
- Infineon FS150R12N3T7BPSA1 IGBT, 150 A 1200 V
- Infineon FP150R12N3T7PB11BPSA1 IGBT, 150 A 1200 V
