Infineon OptiMOS N-Channel MOSFET, 161 A, 40 V N, 8-Pin TDSON BSC019N04LSATMA1
- RS Stock No.:
- 258-0683
- Mfr. Part No.:
- BSC019N04LSATMA1
- Manufacturer:
- Infineon
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MYR10.02
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | MYR5.01 | MYR10.02 |
| 10 - 98 | MYR4.76 | MYR9.52 |
| 100 - 248 | MYR4.475 | MYR8.95 |
| 250 - 498 | MYR4.16 | MYR8.32 |
| 500 + | MYR3.825 | MYR7.65 |
*price indicative
- RS Stock No.:
- 258-0683
- Mfr. Part No.:
- BSC019N04LSATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 161A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.20mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 78W | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS, IEC 61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 161A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.20mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 78W | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS, IEC 61249-2-21 | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 40V Maximum Drain-Source Voltage, 161A Maximum Continuous Drain Current - BSC019N04LSATMA1
This MOSFET is a surface-mount N‑channel power transistor designed for high-current switching in Compact assemblies. It operates across a wide ambient range and is suited to thermally stressed environments. The device offers low conduction losses and is supplied in an eight-pin TDSON package for dense board layouts.
Features and Benefits:
• 1.20mΩ Rds(on) reduces conduction losses for efficiency
• 78W power dissipation supports sustained high-power operation
• 21 nC gate charge enables controlled switching transitions
• ±20V gate rating tolerates robust drive voltages
• -55°C to +175°C range allows extreme temperature endurance
• 78W power dissipation supports sustained high-power operation
• 21 nC gate charge enables controlled switching transitions
• ±20V gate rating tolerates robust drive voltages
• -55°C to +175°C range allows extreme temperature endurance
Applications
• Suitable for high-current DC-DC conversion stages
• Ideal for synchronous rectification in power supplies
• Used with MOSFET drivers in motor-control inverters
• Can be used for server and telecoms power distribution
• Suitable for Compact surface-mount power modules
• Ideal for synchronous rectification in power supplies
• Used with MOSFET drivers in motor-control inverters
• Can be used for server and telecoms power distribution
• Suitable for Compact surface-mount power modules
What package type facilitates Compact board layouts?
It is supplied in an eight-pin TDSON surface-mount package that saves board area and eases thermal interfacing.
How does the device handle high continuous currents?
The transistor supports a continuous drain current of 161A, enabling sustained high-current switching when mounted with appropriate thermal management.
What standards and material restrictions apply to the component?
The device meets RoHS requirements and follows IEC 61249-2-21 material specifications.
What is the maximum volt capability between drain and source?
The maximum permissible drain-source voltage is 40V, defining its safe operating voltage boundary.
What channel configuration does the transistor use?
It uses an N‑channel configuration suited to low-side or synchronous switching topologies.
Related links
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